Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
| Author | : Hongxiang Mo |
| Publisher | : |
| Total Pages | : 131 |
| Release | : 2003 |
| ISBN-10 | : OCLC:53966428 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS by : Hongxiang Mo
Download or read book Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS written by Hongxiang Mo and published by . This book was released on 2003 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.
