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Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy
Language: en
Pages:
Authors: Michael William Moseley
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Type: BOOK - Published: 2013 - Publisher:

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Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted
Epitaxial Growth of III-Nitride Compounds
Language: en
Pages: 228
Authors: Takashi Matsuoka
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Type: BOOK - Published: 2018-04-17 - Publisher: Springer

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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach th
The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy
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Molecular Beam Epitaxy
Language: en
Pages: 790
Authors: Mohamed Henini
Categories: Science
Type: BOOK - Published: 2018-06-27 - Publisher: Elsevier

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in